PART |
Description |
Maker |
2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION From old datasheet system
|
Toshiba Semiconductor
|
2SC3326-B 2SC3326A |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
2SC2878A 2SC2878B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
2SC2878-A 2SC2878-B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
2SC287807 2SC2878 |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
Toshiba Semiconductor
|
2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
TOSHIBA
|
2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E Built in Bias Resistor EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|